2002-01-08 rev.1.2 page 1 BSO203P opti mos tm -p power-transistor product summary v ds -20 v r ds ( on ) 21 m ? i d -8.2 a feature ? p-channel ? enhancement mode ? super logic level (2.5 v rated) ? 150c operating temperature ? avalanche rated ? d v /d t rated sis00070 g2 45 d2 s2 36 d2 g1 27 d1 s1 18 d1 top view type package BSO203P p-so 8 maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d -8.2 -6.6 a pulsed drain current t a =25c i d puls -32.8 avalanche energy, single pulse i d =-8.2 a , v dd =-10v, r gs =25 ? e as 97 mj reverse diode d v /d t i s =-8.2a, v ds =-16v, d i /d t =200a/s, t jmax =150c d v /d t -6 kv/s gate source voltage v gs 12 v power dissipation t a =25c p tot 2 w operating and storage temperature t j , t st g -55... +150 c iec climatic category; din iec 68-1 55/150/56
2002-01-08 rev.1.2 page 2 BSO203P thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point r thjs - - 50 k/w smd version, device on pcb: @ min. footprint, t < 10s @ 6 cm 2 cooling area 1) r thja - - - - 110 62.5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =-250a v (br)dss -20 - - v gate threshold voltage, v gs = v ds i d =-100a v gs(th) -0.6 0.9 -1.2 zero gate voltage drain current v ds =-20v, v gs =0, t j =25c v ds =-20v, v gs =0, t j =150c i dss - - -0.1 -10 -1 -100 a gate-source leakage current v gs =-12v, v ds =0 i gss - -10 -100 na drain-source on-state resistance v gs =-2.5v, i d =-6.4a r ds(on) - 26 35 m drain-source on-state resistance v gs =-4.5, i d =-8.2a r ds(on) - 18.6 21 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air; t 10 sec.
2002-01-08 rev.1.2 page 3 BSO203P electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max i d =-6.6a 17 34 - s input capacitance c iss v gs =0, v ds =-15v, f =1mhz - 2242 - pf output capacitance c oss - 852 - reverse transfer capacitance c rss - 690 - turn-on delay time t d ( on ) v dd =-10v, v gs =-4.5v, i d =-1a, r g =6 - 15.5 23.2 ns rise time t r - 25.9 38.9 turn-off delay time t d ( off ) - 59 88.5 fall time t f - 63.3 95 gate charge characteristics gate to source charge q g s v dd =-15v, i d =-8.2a - -3.5 -5.2 nc gate to drain charge q g d - -15.1 -22.6 gate charge total q g v dd =-15v, i d =-8.2a, v gs =0 to -4.5v - -32.4 -48.6 gate plateau voltage v (p lateau ) v dd =-15v, i d =-8.2a - -1.6 - v reverse diode inverse diode continuous forward current i s t a =25c - - -2.5 a inverse diode direct current, pulsed i sm - - -32.8 inverse diode forward voltage v sd v gs =0, i f =8.2a - 0.85 1.3 v reverse recovery time t rr v r =-10v, | i f | = | l d |, d i f /d t =100a/s - 35.7 44.6 ns reverse recovery charge q rr - 18.7 23.4 nc
2002-01-08 rev.1.2 page 4 BSO203P 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 w 2.2 BSO203P p tot 2 drain current i d = f ( t a ) parameter: | v gs | 4.5 v 0 20 40 60 80 100 120 c 160 t a 0 -1 -2 -3 -4 -5 -6 -7 -8 a -10 BSO203P i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds -2 -10 -1 -10 0 -10 1 -10 2 -10 a BSO203P i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 120.0 s 4 transient thermal impedance z thjs = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w BSO203P z thjs single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2002-01-08 rev.1.2 page 5 BSO203P 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 2 4 6 v 10 - v ds 0 10 20 30 40 50 60 70 a 90 - i d vgs = -2.5v vgs = -3v vgs = -3.5v vgs = -2v vgs = -4v vgs = -4.5v vgs = -6v vgs = -10v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 5 10 15 20 25 30 35 40 a 50 - i d 0 0.005 0.01 0.015 0.02 0.03 r ds(on) vgs = -2.5v vgs = -3.5v vgs = -3v vgs = -4v vgs = -4.5v vgs = -5v vgs = -6v vgs = -8v vgs = -10v 7 typ. transfer characteristics i d = f ( v gs ); | v ds | 2 x | i d | x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 v 3 - v gs 0 5 10 15 20 25 a 35 - i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: t p = 80 s 0 5 10 15 20 25 a 35 - i d 0 10 20 30 40 s 60 g fs
2002-01-08 rev.1.2 page 6 BSO203P 9 drain-source on-resistance r ds(on) = f( t j ) parameter: i d = -8.2 a, v gs = -4.5 v -60 -20 20 60 100 c 160 t j 12 14 16 18 20 22 24 26 m 30 r ds(on) typ. 98% 10 gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = -100 a -60 -20 20 60 100 c 160 t j 0 0.2 0.4 0.6 0.8 1 v 1.4 - v gs(th) typ. 98% 2% 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 -10 0 -10 1 -10 2 -10 a BSO203P i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz 0 5 v 15 - v ds 2 10 3 10 4 10 pf c c rss c iss c oss
2002-01-08 rev.1.2 page 7 BSO203P 13 typ. avalanche energy e as = f ( t j ), par.: i d = -8.2 a v dd = -10 v, r gs = 25 25 50 75 100 c 150 t j 0 10 20 30 40 50 60 70 80 mj 100 e as 14 typ. gate charge | v gs |= f ( q gate ) parameter: i d = -8.2 a pulsed 0 10 20 30 40 nc 60 | q gate | 0 1 2 3 4 5 6 7 8 9 10 v 12 - v gs 0.2 vds max. 0.5 vds max. 0.8 vds max. 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j -18 -18.5 -19 -19.5 -20 -20.5 -21 -21.5 -22 -22.5 -23 -23.5 v -24.5 BSO203P v (br)dss
2002-01-08 rev.1.2 page 8 BSO203P
|
